AUGER-TRANSITION OF ELECTRONS TO THE CONDENSON STATE ON THE DISLOCATIONS IN SEMICONDUCTORS
DOI:
https://doi.org/10.46991/PYSU:A/2005.39.1.040Keywords:
Auger transition, free electron, n-type semiconductor, lattice polarization, condensonAbstract
Auger transition of a free electron to an edge dislocation is considered in the n-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called «condenson»). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy.
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Published
2005-02-28
How to Cite
Musaelyan, A. S. (2005). AUGER-TRANSITION OF ELECTRONS TO THE CONDENSON STATE ON THE DISLOCATIONS IN SEMICONDUCTORS. Proceedings of the YSU A: Physical and Mathematical Sciences, 39(1 (206), 40–47. https://doi.org/10.46991/PYSU:A/2005.39.1.040
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Physics
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Copyright (c) 2005 Proceedings of the YSU
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