AUGER-TRANSITION OF ELECTRONS TO THE CONDENSON STATE ON THE DISLOCATIONS IN SEMICONDUCTORS

Authors

  • A. S. Musaelyan Institute of Radiophysics and Electronics NAS RA, Armenia

DOI:

https://doi.org/10.46991/PYSU:A/2005.39.1.040

Keywords:

Auger transition, free electron, n-type semiconductor, lattice polarization, condenson

Abstract

Auger transition of a free electron to an edge dislocation is considered in the n-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called «condenson»). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy.

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Published

2005-02-28

How to Cite

Musaelyan, A. S. (2005). AUGER-TRANSITION OF ELECTRONS TO THE CONDENSON STATE ON THE DISLOCATIONS IN SEMICONDUCTORS. Proceedings of the YSU A: Physical and Mathematical Sciences, 39(1 (206), 40–47. https://doi.org/10.46991/PYSU:A/2005.39.1.040

Issue

Section

Physics