THERMAL CAPTURE OF ELECTRONS BY DISLOCATION KINKS IN SEMICONDUCTORS

Authors

  • A. S. Vardanyan Academician Gourgen Sahakyan's Chair of Theoretical Physics, YSU, Armenia
  • R. A. Vardanyan Academician Gourgen Sahakyan's Chair of Theoretical Physics, YSU, Armenia

DOI:

https://doi.org/10.46991/PYSU:A/2008.42.2.041

Keywords:

process of thermal capture of an electron, smooth kink on dislocation, quantum transition, multi-phonon capture

Abstract

In the light of recombination-enhanced motion of dislocations in semiconductors, we explored the process of thermal capture of an electron by a smooth kink on dislocation. Multi-phonon capture becomes possible due to carrier localisation on the kink. With the use of wave function of localized state we have found the multi-phonon capture cross-section for two limiting temperature cases corresponding to the thermally activated and quantum transition between vibronic terms.

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Published

2023-09-19

How to Cite

Vardanyan, A. S., & Vardanyan, R. A. (2023). THERMAL CAPTURE OF ELECTRONS BY DISLOCATION KINKS IN SEMICONDUCTORS. Proceedings of the YSU A: Physical and Mathematical Sciences, 42(2 (216), 41–48. https://doi.org/10.46991/PYSU:A/2008.42.2.041

Issue

Section

Physics