PLASMONIC MODE CONFINEMENT IN InAs–SiO$_2$–Si WAVEGUIDE IN TERAHERTZ REGION
DOI:
https://doi.org/10.46991/PYSU:A/2011.45.3.058Keywords:
terahertz, waveguides, surface plasmonsAbstract
The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated. It is shown that InAs–SiO2–Si structure supports strongly confined guided mode with а sizes ~0.0016 λ × 0.02 λ at 1 THz.
Downloads
Published
2011-10-17
How to Cite
Hakobyan, H. (2011). PLASMONIC MODE CONFINEMENT IN InAs–SiO$_2$–Si WAVEGUIDE IN TERAHERTZ REGION. Proceedings of the YSU A: Physical and Mathematical Sciences, 45(3 (226), 58–61. https://doi.org/10.46991/PYSU:A/2011.45.3.058
Issue
Section
Physics
License
Copyright (c) 2011 Proceedings of the YSU
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.