INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

Authors

  • A.I. Vartanyan Chair of Solid State Physics, YSU, Armenia
  • V.N. Mughnetsyan Chair of Solid State Physics, YSU, Armenia
  • K.A. Vardanyan Chair of Solid State Physics, YSU, Armenia
  • A.V. Dvurechenskii A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia
  • A.A. Kirakosyan Chair of Solid State Physics, YSU, Armenia

DOI:

https://doi.org/10.46991/PSYU:A/2014.48.2.050

Keywords:

capture process, two-phonon processes, confined optical phonons

Abstract

Electron capture process in GaAs/AlAs spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as 1010 s–1 at temperature T>100 K. A short capture time is also achieved for low carrier density.

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Published

2014-07-10

How to Cite

Vartanyan, A., Mughnetsyan, V., Vardanyan, K., Dvurechenskii, A., & Kirakosyan, A. (2014). INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS. Proceedings of the YSU A: Physical and Mathematical Sciences, 48(2 (234), 50–53. https://doi.org/10.46991/PSYU:A/2014.48.2.050

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Section

Physics